04.02.2015, 14:26
Mitsubishi Electric to Launch 1,200V High-voltage Integrated Circuit With Desaturation Detection for Power Semiconductors
OREANDA-NEWS. Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed a high-voltage integrated circuit (HVIC) to drive power semiconductors equipped with AC400 V inverter systems for use in Europe and elsewhere.
The M81748FP boasts an industry-leading 1,200 V rating and desaturation detection. Sales begin on March 31. M81748FP 1,200V HVIC with desaturation detection Enlarge M81748FP 1,200V HVIC with desaturation detection Variable frequency inverters are being used increasingly in motor control systems of consumer appliances and industrial machinery to save energy and improve performance, so demand is growing for HVICs that drive power semiconductors in inverter systems.
In particular, AC 400V inverter systems prevalent in Europe and certain other markets require high-voltage HVICs, so Mitsubishi Electric will now meet this demand with its new, high-reliability 1,200V HVIC, which boasts desaturation detection embedded with 1,200V P-channel MOSFET. Desaturation detection prevents thermal destruction of power semiconductors due to overcurrent. Fault protection using desaturation detection is more suitable for power modules from 150A than using a shunt resistor.
The M81748FP boasts an industry-leading 1,200 V rating and desaturation detection. Sales begin on March 31. M81748FP 1,200V HVIC with desaturation detection Enlarge M81748FP 1,200V HVIC with desaturation detection Variable frequency inverters are being used increasingly in motor control systems of consumer appliances and industrial machinery to save energy and improve performance, so demand is growing for HVICs that drive power semiconductors in inverter systems.
In particular, AC 400V inverter systems prevalent in Europe and certain other markets require high-voltage HVICs, so Mitsubishi Electric will now meet this demand with its new, high-reliability 1,200V HVIC, which boasts desaturation detection embedded with 1,200V P-channel MOSFET. Desaturation detection prevents thermal destruction of power semiconductors due to overcurrent. Fault protection using desaturation detection is more suitable for power modules from 150A than using a shunt resistor.
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