OREANDA-NEWS.  December 01, 2014. New conversion efficiency world records for high-efficiency p-type and n-type silicon solar cells were recently set by researchers at Trina Solar’s State Key Laboratory of PV Science and Technology of China, according to recent reports.

The new p-type mono-crystalline silicon solar cell conversion efficiency record of 21.40% was set via an industrial Cz wafer (156?156 mm2) — one that integrates advanced technologies such as back surface passivation and local back surface field. This new record was confirmed by Fraunhofer ISE CalLab in Germany.

A new record of 20.53% (156?156 mm2) was set, as well, for p-type multi-crystalline silicon solar cells — using the same technologies and integrative practices. This record was confirmed by the National Center of Supervision and Inspection on Solar Photovoltaic Product Quality in Wuxi, China.

These records were both set via silicon solar cells with passivated rear surface and local contact, on 6? substrates and fabricated with an industrial process — commonly known as iPERC cells.

As far as the new n-type mono-crystalline silicon solar cell conversion efficiency record, this new record of 22.9% (on a 156?156 mm2 n-type Cz wafer) was made via “an Interdigitated Back Contact (IBC) structure and industrially feasible production process” and was independently tested by Japan Electrical Safety & Environment Technology Laboratories.