OREANDA-NEWS. Mitsubishi Electric Corporation announced it will launch a Ku-band 20W monolithic microwave integrated circuit (MMIC) amplifier for satellite earth stations, featuring the world's first gallium nitride (GaN) high-electron mobility transistor (HEMT) MMIC with an integrated linearizer to compensate for distortion. The MGFG5H1503 GaN HEMT, which has output power of 43dBm (20W) and linear gain of 20.0dB, will contribute to downsizing, high performance and faster development of power transmitters. Mitsubishi Electric will begin shipping samples on February 1.

MGFG5H1503, as well as Mitsubishi Electric's existing 50W and 80W GaN HEMTs enable all high-power amplifier stages of power transmitters to be configured for a wide range of output power.

The demand for satellite communication is increasing, especially in Ku-band, which enables high-speed communication even under adverse conditions, such as natural disasters, and in areas where construction of communication facilities is difficult. Gallium arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters, but output power is limited by their low breakdown voltage and low-voltage operation. The problem is solved with Mitsubishi Electric's MGFG5H1503 Ku-band GaN HEMT MMIC with integrated linearizer, which improves output power.