OREANDA-NEWS. Fujitsu Laboratories Limited announced the development of a gallium-nitride HEMT-based transceiver module technology that features an output of 10 W and operates at frequencies up to the millimeter-wave band.

Until now, developing high-output modules that operate in the millimeter-wave band has required modules consisting of separately packaged components to allow for sufficient heat dissipation. As a result, it has been difficult to produce compact modules. In addition, because the occurrence of signal loss tends to increase in internal module terminal connector components at higher frequencies, reaching millimeter-wave operations has proved to be challenging.

The new high-output millimeter-wave transceiver module developed by Fujitsu Laboratories uses a heat sink embedded with multilayer ceramic technology capable of efficiently dissipating heat. Through its unique architecture that reduces signal loss occurring in internal terminal connector components, the transceiver module can achieve millimeter-wave operations. With dimensions of 12 mm x 36 mm x 3.3 mm, the new module measures less than 1/20 the size of conventional combined unit.

Using the new technology, it is possible to combine multiple chips within a single unit, thereby enabling the development of more compact radar devices and wireless communications equipment.

Details of the new technology will be presented at the IEEE MTT 2013 International Microwave Symposium (IMS2013), to be held beginning June 2nd in Seattle, Washington.