OREANDA-NEWS. Fujitsu Semiconductor Limited announced the development of two new FRAM products, MB85RS1MT and MB85RS2MT, which feature 1 Mbit and 2 Mbit of memory, respectively, making them the largest density serial-interface FRAM products offered by Fujitsu Semiconductor. The new products will be made available in sample quantities starting end of March 2013.

The two new FRAM products guarantee 10 trillion read/write cycles, roughly ten times more than existing chips, making them optimal for use in applications such as smart meters, industrial machinery and medical devices. Compared to identical density EEPROM, MB85RS1MT and MB85RS2MT consume 92% less power during writing. In addition, because the new FRAM products can incorporate all the technology required for system memory components—which have typically consisted of EEPROM, SRAM and a battery for data retention—into a single chip, it is possible to substantially reduce component costs, mounted area, and power consumption. This, in turn, will also greatly contribute to the development of smaller, power-efficient equipment for which maintenance can be easily performed, since backup battery is not necessary.

FRAM is a type of memory that features both non-volatility, which allows data to be retained even when the power is switched off, and random access, which enables fast data writing. Because FRAM can safely store data that is being written even at sudden power source failures and power outages, it is possible to ensure the protection of equipment information and data recorded immediately preceding a power source outage. Based on this capability, since launching volume production in 1999 FRAM products from Fujitsu Semiconductor have been widely employed for use primarily in factory automation equipment, measurement devices, banking terminals, and medical devices.