Northrop Grumman’s MMIC Meets FCC’s 5G System Requirements
Northrop Grumman is leveraging more than 20 years of advanced microelectronics development to offer a suite of MMICs that are applicable for 5G applications. With the expanded 5G network frequencies, Northrop Grumman’s MPS technologies and products can be used to provide low noise, high linearity/ high output power and/or frequency conversion across all of the 5G frequency bands. The products meet user demands for multi-media access, high QoS and anytime access. A complete table of 5G-compatible MMIC products are shown below.
"MPS’s low noise and high power technologies and products provide a differentiating advantage that allows operators the ability to maximize the number of users and revenue generation. The Northrop Grumman power amplifiers provide the high-linearity performance near peak output power levels required for complex modulations, which optimizes the data throughput within the FCC allocated bandwidth" said Chris Brown, general manager, Northrop Grumman MPS. "This same performance advantage is realized in the 5G receivers through the use of the Northrop Grumman low noise amplifiers utilizing our GaAs and InP technologies. Between the power amplifiers, the low noise amplifiers and the mixers, we can address all of the 5G frequency bands"
Also at IMS 2017, Northrop Grumman engineers presented on high power and high efficiency chipsets for Ku-Band, Ka-Band, V-Band, Q-Band, E and W-band communications, and on optimizing ground, airborne and space-based communication links using Northrop Grumman’s advanced semiconductor products and technologies.
The MPS team also presented enhanced gallium nitride manufacturing options showing the transition of communications products in everyday use.
Northrop Grumman is a pioneer in the design and fabrication of high-speed components for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications. Northrop Grumman Northrop Grumman’s MPS also offers foundry services that utilize advanced silicon, silicon-germanium, silicon-carbide, gallium nitride, and gallium arsenide and indium phosphide semiconductor manufacturing processes.
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5G MMIC Products |
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Power Amplifiers |
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Part |
Description |
Frequency |
Gain |
Psat |
Status |
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(GHz) |
(dB) |
(dBm) |
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APN243 |
GaN HEMT High Power Amplifier |
24.25 to 27.5 |
20.5 |
40.5 |
Pre-production |
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27.5 to 28.35 |
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APN244 |
GaN HEMT Medium Power Amplifier |
24.25 to 27.5 |
20.5 |
38 |
Pre-production |
|
|
27.5 to 28.35 |
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APN248 |
GaN HEMT High Power Amplifier |
27.5 to 28.35 |
20 |
45.5 |
Production |
|
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APN228 |
GaN HEMT High Power Amplifier |
27.5 to 28.35 |
19.5 |
41.2 |
Production |
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APN229 |
GaN HEMT Medium Power Amplifier |
27.5 to 28.35 |
20 |
39 |
Production |
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37-40 GHz GaAs PA |
GaAs HEMT Power Amplifier |
37 to 38 |
15 |
30 |
Preliminary |
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38.6 to 40 |
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37-43.5 GHz GaAs PA |
GaAs HEMT Power Amplifier |
37 to 38 |
12 |
30 |
Advance |
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38.6 to 40 |
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37-43.5 |
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APN249 |
GaN HEMT Power Amplifier |
37 to 38 |
15 |
30 |
Advance |
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38.6 to 40 |
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APN247 |
GaN HEMT Medium Power Amplifier |
37 to 38 |
15 |
35 |
Advance |
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38.6 to 40 |
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37-43.5 |
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APN253 |
GaN HEMT Medium Power Amplifier |
37 to 38 |
16 |
35 |
Advance |
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38.6 to 40 |
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37-43.5 |
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APN298 |
GaN HEMT High Power Amplifier |
47 to 52.6 |
20 |
40.5 |
In Development |
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APN299 |
GaN HEMT Medium Power Amplifier |
47 to 52.6 |
20 |
38 |
In Development |
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50.5-52.6 GHz GaAs PA |
GaAs HEMT Driver Amplifier |
50.2 to 52.6 |
24 |
19 |
Preliminary |
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APH668 |
GaAs HEMT High Power Amplifier |
66 to 76 |
> 17 |
28 |
Pre-production |
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APH670 |
GaAs HEMT Medium Power Amplifier |
66 to 76 |
> 19 |
25 |
Pre-production |
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APH667 |
GaAs HEMT High Power Amplifier |
81 to 86 |
17 |
25.5 |
Pre-production |
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APH669 |
GaAs HEMT Medium Power Amplifier |
92 to 96 |
16 |
23.5 |
Pre-production |
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