OREANDA-NEWS. Mitsubishi Electric Corporation announced today the launch of a new transfer-mold power semiconductor model in its lineup of Super-mini Dual-In-line Package Intelligent Power Modules (DIPIPMTM), embedded with Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC-MOSFET). It will launch on August 17.

Product Features
1) Top class low power consumption in the home appliance market
- SiC-MOSFET reduces power consumption by about 70 percent compared with Mitsubishi Electric's existing Super-mini DIPIPM, and contributes to an overall reduction in air conditioner power consumption
 
2) Simplified inverter system design
- Footprint and pin configurations are compatible with Mitsubishi Electric's existing Super mini DIPIPM Ver.6, PSSxxS92x6series,etc.
- Designed with a high threshold voltage, SiC-MOSFET does not require a negative bias circuit, allowing simplification of the system design
- Fewer external components due to use of embedded bootstrap diode with current-limiting resistor